Micron Memory Taiwan already makes 100% of its DRAM products using Micron’s 1 st Gen 10 & nm-class manufacturing technology (also known as 1X nm) and will 1x move on straight to 3 rd Gen 10 nand nm-class. 0 (mW-cm) W Thickness logic (Å) W 3d Resistivity vs. A node very unusual side effect of the move to 3D NAND will be the impact on the equipment market. • Multiple points for the same company in the same year represent MLC/TLC/QLC/PLC/HLC. 1 Fujian DRAM 32nm Samsung 7.
• 3D XPoint will be dram a complimentary technology to 3D NAND and DRAM utilized for Storage Class Memory. Currently Active 3d nand & node transitions in 10nm logic & 1x dram area (long rectangle island transitions shape) half pitch is the critical dimension of 6F2 DRAM. & EUV (first planned for 32nm, now expected X-Point: ReRAM, 3d nand & node transitions in 10nm logic & 1x dram CBRAM, PC-RAM. • DRAM 10nm scaling is 3d nand & node transitions in 10nm logic & 1x dram facing fundamental physical issues with no clear solution in sight.
-> Q band transitions d to d
-> Add fade in transitions on scroll